production specification dual npn small signal surface mount transistor MMDT2222A e001 www.gmicroelec.com rev.a 1 features z epitaxial planar die construction. z complementary pnp type available mmdt2907a. z ultra-small surface mount package. applications z dual npn small signal surface mount transisto r. sot-363 ordering information type no. marking package code MMDT2222A k1p sot-363 maximum rating @ ta=25 unless otherwise specified symbol parameter value unit v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 600 ma p d power dissipation 200 mw r ja thermal resistance, junction to ambient 625 / w t j, t stg junction and storage temperature -55 to +150 pb lead-free
production specification dual npn small signal surface mount transistor MMDT2222A e001 www.gmicroelec.com rev.a 2 electrical characteristics @ ta=2 5 unless otherwise specified parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c =10 a i e =0 75 - v collector-emitter breakdown voltage v (br)ceo i c =10ma i b =0 40 - v emitter-base breakdown voltage v (br)ebo i e =10 a i c =0 6 - v collector cut-off current i cbo v cb =60v i e =0 v cb =60v i e =0 t a =150 - 10 na a collector cut-off current i cex v ce =60v i eb(off) =3.0v - 10 na emitter cut-off current i ebo v eb =3v i c =0 - 10 na base cut-off current i bl v ce =60v i eb(off) =3.0v - 20 na v ce =10v i c =100 a 35 - v ce =10v i c =1.0ma 50 - v ce =10v i c =10ma 75 - v ce =10v i c =150ma 100 300 v ce =10v i c =500ma 40 - v ce =10v i c =10ma t a =-55 50 - dc current gain h fe v ce =1.0v i c =150ma 35 - - collector-emitter saturation voltage v ce(sat) i c =150ma i b =15ma i c =500ma i b =50ma - 0.3 1.0 v base-emitter saturation voltage v be(sat) i c =150ma i b =15ma i c =500ma i b =50ma 0.6 - 1.2 2.0 v transition frequency f t v ce =20v i c =20ma f=100mhz 300 mhz output capacitance c obo v cb =10v,f=1.0mhz,i e =0 - 8 pf input capacitance c ibo v eb =0.5v,f=1.0mhz,i c =0 - 25 pf noise figure nf v ce =10v,f=1.0khz,i c =100 a r s =1.0k ? - 4.0 db delay time t d 10 ns rise time t r v cc =30v, v be(off) =-0.5v i c =150ma , i b1 = 15ma 25 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 =-i b2 =15ma 60 ns
production specification dual npn small signal surface mount transistor MMDT2222A e001 www.gmicroelec.com rev.a 3 package outline plastic surface mounted package sot-363 soldering footprint unit : mm package information sot-363 dim min max a 2.00 2.20 b 1.15 1.35 c 0.95 typical d 0.25 typical e 0.25 0.40 g 0.60 0.70 h 0.02 0.10 j 0.10 typical k 2.2 2.4 all dimensions in mm device package shipping MMDT2222A sot-363 3000/tape&reel 0.50 0.40 1.90 0.65 0.65 a b c d e g k j h
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